Infineon Technologies - IRLR2905ZPBF

KEY Part #: K6400832

IRLR2905ZPBF Pricing (USD) [74221pcs Stock]

  • 1 pcs$0.46409
  • 10 pcs$0.40974
  • 100 pcs$0.30624
  • 500 pcs$0.23748
  • 1,000 pcs$0.18749

Part Number:
IRLR2905ZPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 42A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Infineon Technologies IRLR2905ZPBF electronic components. IRLR2905ZPBF can be shipped within 24 hours after order. If you have any demands for IRLR2905ZPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR2905ZPBF Product Attributes

Part Number : IRLR2905ZPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 42A DPAK
Series : HEXFET®
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 1570pF @ 25V
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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