Infineon Technologies - IPB04N03LAT

KEY Part #: K6400819

[3266pcs Stock]


    Part Number:
    IPB04N03LAT
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 25V 80A D2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in Infineon Technologies IPB04N03LAT electronic components. IPB04N03LAT can be shipped within 24 hours after order. If you have any demands for IPB04N03LAT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPB04N03LAT Product Attributes

    Part Number : IPB04N03LAT
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 25V 80A D2PAK
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 80A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 55A, 10V
    Vgs(th) (Max) @ Id : 2V @ 60µA
    Gate Charge (Qg) (Max) @ Vgs : 32nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3877pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 107W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PG-TO263-3-2
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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