Vishay Siliconix - SI9433BDY-T1-GE3

KEY Part #: K6403496

SI9433BDY-T1-GE3 Pricing (USD) [260011pcs Stock]

  • 1 pcs$0.14225
  • 2,500 pcs$0.12049

Part Number:
SI9433BDY-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 20V 4.5A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Power Driver Modules, Thyristors - SCRs - Modules, Diodes - RF, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SI9433BDY-T1-GE3 electronic components. SI9433BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9433BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI9433BDY-T1-GE3 Product Attributes

Part Number : SI9433BDY-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 20V 4.5A 8-SOIC
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.7V, 4.5V
Rds On (Max) @ Id, Vgs : 40 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : 1.3W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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