ON Semiconductor - FQD18N20V2TM

KEY Part #: K6403450

FQD18N20V2TM Pricing (USD) [151384pcs Stock]

  • 1 pcs$0.24433
  • 2,500 pcs$0.22414

Part Number:
FQD18N20V2TM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 200V 15A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - JFETs ...
Competitive Advantage:
We specialize in ON Semiconductor FQD18N20V2TM electronic components. FQD18N20V2TM can be shipped within 24 hours after order. If you have any demands for FQD18N20V2TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD18N20V2TM Product Attributes

Part Number : FQD18N20V2TM
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 200V 15A DPAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 140 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1080pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63