FQD4N25TM-WS Pricing (USD) [458617pcs Stock]
- 1 pcs$0.08065
- Part Number:
- FQD4N25TM-WS
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 250V 3A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQD4N25TM-WS electronic components. FQD4N25TM-WS can be shipped within 24 hours after order. If you have any demands for FQD4N25TM-WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD4N25TM-WS Product Attributes
Part Number :
FQD4N25TM-WS
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 250V 3A DPAK
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.75 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 37W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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