FDD306P Pricing (USD) [263402pcs Stock]
- 1 pcs$0.14112
- 2,500 pcs$0.14042
- Part Number:
- FDD306P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 12V 6.7A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD306P electronic components. FDD306P can be shipped within 24 hours after order. If you have any demands for FDD306P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD306P Product Attributes
Part Number :
FDD306P
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 12V 6.7A DPAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
28 mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1290pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
52W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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