FQD12N20LTM-F085P Pricing (USD) [134651pcs Stock]
- 1 pcs$0.27469
- Part Number:
- FQD12N20LTM-F085P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- NMOS DPAK 200V 280 MOHM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQD12N20LTM-F085P electronic components. FQD12N20LTM-F085P can be shipped within 24 hours after order. If you have any demands for FQD12N20LTM-F085P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD12N20LTM-F085P Product Attributes
Part Number :
FQD12N20LTM-F085P
Manufacturer :
ON Semiconductor
Description :
NMOS DPAK 200V 280 MOHM
Series :
QFET®
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
280 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1080pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 55W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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