Renesas Electronics America - RJK2009DPM-00#T0

KEY Part #: K6404027

[2154pcs Stock]


    Part Number:
    RJK2009DPM-00#T0
    Manufacturer:
    Renesas Electronics America
    Detailed description:
    MOSFET N-CH 200V 40A TO3PFM.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Thyristors - DIACs, SIDACs ...
    Competitive Advantage:
    We specialize in Renesas Electronics America RJK2009DPM-00#T0 electronic components. RJK2009DPM-00#T0 can be shipped within 24 hours after order. If you have any demands for RJK2009DPM-00#T0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJK2009DPM-00#T0 Product Attributes

    Part Number : RJK2009DPM-00#T0
    Manufacturer : Renesas Electronics America
    Description : MOSFET N-CH 200V 40A TO3PFM
    Series : -
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 200V
    Current - Continuous Drain (Id) @ 25°C : 40A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 36 mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : 72nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 60W (Tc)
    Operating Temperature : -
    Mounting Type : Through Hole
    Supplier Device Package : TO-3PFM
    Package / Case : TO-3PFM, SC-93-3

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