FDMC8010ET30 Pricing (USD) [108786pcs Stock]
- 1 pcs$0.34170
- 3,000 pcs$0.34000
- Part Number:
- FDMC8010ET30
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 30A 8-PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMC8010ET30 electronic components. FDMC8010ET30 can be shipped within 24 hours after order. If you have any demands for FDMC8010ET30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMC8010ET30 Product Attributes
Part Number :
FDMC8010ET30
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 30A 8-PQFN
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
30A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5860pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 65W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Power33
Package / Case :
8-PowerWDFN
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