Infineon Technologies - BSC060P03NS3EGATMA1

KEY Part #: K6420423

BSC060P03NS3EGATMA1 Pricing (USD) [193709pcs Stock]

  • 1 pcs$0.19094

Part Number:
BSC060P03NS3EGATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET P-CH 30V 17.7A TDSON-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC060P03NS3EGATMA1 Product Attributes

Part Number : BSC060P03NS3EGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH 30V 17.7A TDSON-8
Series : OptiMOS™
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 6020pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 83W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TDSON-8
Package / Case : 8-PowerTDFN