IXTB30N100L Pricing (USD) [2171pcs Stock]
- 1 pcs$22.06054
- 25 pcs$21.95078
- Part Number:
- IXTB30N100L
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 30A PLUS264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in IXYS IXTB30N100L electronic components. IXTB30N100L can be shipped within 24 hours after order. If you have any demands for IXTB30N100L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTB30N100L Product Attributes
Part Number :
IXTB30N100L
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 30A PLUS264
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
545nC @ 20V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
800W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS264™
Package / Case :
TO-264-3, TO-264AA
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