Infineon Technologies - IRFB7446PBF

KEY Part #: K6400127

IRFB7446PBF Pricing (USD) [59949pcs Stock]

  • 1 pcs$0.54353
  • 10 pcs$0.48291
  • 100 pcs$0.38152
  • 500 pcs$0.27989
  • 1,000 pcs$0.22096

Part Number:
IRFB7446PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 40V 120A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IRFB7446PBF electronic components. IRFB7446PBF can be shipped within 24 hours after order. If you have any demands for IRFB7446PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB7446PBF Product Attributes

Part Number : IRFB7446PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 40V 120A TO220
Series : HEXFET®, StrongIRFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 70A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3183pF @ 25V
FET Feature : -
Power Dissipation (Max) : 99W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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