Rohm Semiconductor - R6008ANX

KEY Part #: K6400028

R6008ANX Pricing (USD) [31488pcs Stock]

  • 1 pcs$1.44109
  • 10 pcs$1.30051
  • 100 pcs$0.99136
  • 500 pcs$0.77104
  • 1,000 pcs$0.63886

Part Number:
R6008ANX
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET N-CH 600V 8A TO-220FM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Rohm Semiconductor R6008ANX electronic components. R6008ANX can be shipped within 24 hours after order. If you have any demands for R6008ANX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

R6008ANX Product Attributes

Part Number : R6008ANX
Manufacturer : Rohm Semiconductor
Description : MOSFET N-CH 600V 8A TO-220FM
Series : -
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 800 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 680pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FM
Package / Case : TO-220-3 Full Pack

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