[8679pcs Stock]
- Part Number:
- TK4P55DA(T6RSS-Q)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 550V 3.5A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK4P55DA(T6RSS-Q) electronic components. TK4P55DA(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK4P55DA(T6RSS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4P55DA(T6RSS-Q) Product Attributes
Part Number :
TK4P55DA(T6RSS-Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 550V 3.5A DPAK-3
Series :
π-MOSVII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
550V
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.45 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id :
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
80W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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