Toshiba Semiconductor and Storage - TPC6009-H(TE85L,FM

KEY Part #: K6405623

[1601pcs Stock]


    Part Number:
    TPC6009-H(TE85L,FM
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET N-CH 40V 5.3A VS6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Power Driver Modules and Thyristors - DIACs, SIDACs ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage TPC6009-H(TE85L,FM electronic components. TPC6009-H(TE85L,FM can be shipped within 24 hours after order. If you have any demands for TPC6009-H(TE85L,FM, Please submit a Request for Quotation here or send us an email:
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    TPC6009-H(TE85L,FM Product Attributes

    Part Number : TPC6009-H(TE85L,FM
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET N-CH 40V 5.3A VS6
    Series : U-MOSVI-H
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 5.3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 81 mOhm @ 2.7A, 10V
    Vgs(th) (Max) @ Id : 2.3V @ 100µA
    Gate Charge (Qg) (Max) @ Vgs : 4.7nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 290pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 700mW (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : VS-6 (2.9x2.8)
    Package / Case : SOT-23-6 Thin, TSOT-23-6

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