IPL60R180P6AUMA1 Pricing (USD) [56196pcs Stock]
- 1 pcs$0.69579
- 3,000 pcs$0.63829
- Part Number:
- IPL60R180P6AUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 4VSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Diodes - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPL60R180P6AUMA1 electronic components. IPL60R180P6AUMA1 can be shipped within 24 hours after order. If you have any demands for IPL60R180P6AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL60R180P6AUMA1 Product Attributes
Part Number :
IPL60R180P6AUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 4VSON
Series :
CoolMOS™ P6
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2080pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
176W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-VSON-4
Package / Case :
4-PowerTSFN
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