Infineon Technologies - IPZ40N04S5L7R4ATMA1

KEY Part #: K6416880

IPZ40N04S5L7R4ATMA1 Pricing (USD) [295252pcs Stock]

  • 1 pcs$0.12527
  • 5,000 pcs$0.11928

Part Number:
IPZ40N04S5L7R4ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 8TDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Modules, Power Driver Modules, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPZ40N04S5L7R4ATMA1 Product Attributes

Part Number : IPZ40N04S5L7R4ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 8TDSON
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 920pF @ 25V
FET Feature : -
Power Dissipation (Max) : 34W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TSDSON-8
Package / Case : 8-PowerVDFN