IRFI4110GPBF Pricing (USD) [21748pcs Stock]
- 1 pcs$1.71432
- 10 pcs$1.53011
- 100 pcs$1.25454
- 500 pcs$0.96378
- 1,000 pcs$0.81283
- Part Number:
- IRFI4110GPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 72A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFI4110GPBF electronic components. IRFI4110GPBF can be shipped within 24 hours after order. If you have any demands for IRFI4110GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI4110GPBF Product Attributes
Part Number :
IRFI4110GPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 72A TO220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 43A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
290nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9540pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
61W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB Full-Pak
Package / Case :
TO-220-3 Full Pack
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