NVE4153NT1G Pricing (USD) [493932pcs Stock]
- 1 pcs$0.07488
- 3,000 pcs$0.06770
- Part Number:
- NVE4153NT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 20V 0.915A SC89-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVE4153NT1G electronic components. NVE4153NT1G can be shipped within 24 hours after order. If you have any demands for NVE4153NT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVE4153NT1G Product Attributes
Part Number :
NVE4153NT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 20V 0.915A SC89-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
230 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.82nC @ 4.5V
Vgs (Max) :
±6V
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 16V
FET Feature :
-
Power Dissipation (Max) :
300mW (Tj)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-89
Package / Case :
SC-89, SOT-490
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