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  5. LND150N3-G-P002

Microchip Technology - LND150N3-G-P002

KEY Part #: K6393119

LND150N3-G-P002 Pricing (USD) [238940pcs Stock]

  • 1 pcs$0.15859
  • 2,000 pcs$0.15780
Part Number:
LND150N3-G-P002
Manufacturer:
Microchip Technology
Detailed description:
MOSFET N-CH 500V 30MA TO92-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Microchip Technology LND150N3-G-P002 electronic components. LND150N3-G-P002 can be shipped within 24 hours after order. If you have any demands for LND150N3-G-P002, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LND150N3-G-P002 Product Attributes

Part Number : LND150N3-G-P002
Manufacturer : Microchip Technology
Description : MOSFET N-CH 500V 30MA TO92-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 0V
Rds On (Max) @ Id, Vgs : 1000 Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 740mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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