SIS903DN-T1-GE3 Pricing (USD) [201147pcs Stock]
- 1 pcs$0.18388
- Part Number:
- SIS903DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Product Attributes
Part Number :
SIS903DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL P-CHAN POWERPAK 1212
Series :
TrenchFET® Gen III
Part Status :
Active
FET Type :
2 P-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Rds On (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2565pF @ 10V
Power - Max :
2.6W (Ta), 23W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® 1212-8 Dual
Supplier Device Package :
PowerPAK® 1212-8 Dual
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