Vishay Siliconix - SIRA00DP-T1-GE3

KEY Part #: K6416887

SIRA00DP-T1-GE3 Pricing (USD) [83788pcs Stock]

  • 1 pcs$0.46667
  • 3,000 pcs$0.43722

Part Number:
SIRA00DP-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 100A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Thyristors - TRIACs, Power Driver Modules, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - Programmable Unijunction and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Siliconix SIRA00DP-T1-GE3 electronic components. SIRA00DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA00DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIRA00DP-T1-GE3 Product Attributes

Part Number : SIRA00DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 100A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 220nC @ 10V
Vgs (Max) : +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 11700pF @ 15V
FET Feature : -
Power Dissipation (Max) : 6.25W (Ta), 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8

You May Also Be Interested In
  • 2N7000-D26Z

    ON Semiconductor

    MOSFET N-CH 60V 200MA TO-92.

  • IRLR3410TRPBF

    Infineon Technologies

    MOSFET N-CH 100V 17A DPAK.

  • IRFR5410TRPBF

    Infineon Technologies

    MOSFET P-CH 100V 13A DPAK.

  • FDD8870

    ON Semiconductor

    MOSFET N-CH 30V 160A D-PAK.

  • IPA65R150CFDXKSA1

    Infineon Technologies

    MOSFET N-CH 650V 22.4A TO220.

  • IRFI4110GPBF

    Infineon Technologies

    MOSFET N-CH 100V 72A TO220AB.