BSR606NH6327XTSA1 Pricing (USD) [481151pcs Stock]
- 1 pcs$0.07687
- 3,000 pcs$0.07377
- Part Number:
- BSR606NH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 2.3A SC59.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - RF and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSR606NH6327XTSA1 electronic components. BSR606NH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSR606NH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSR606NH6327XTSA1 Product Attributes
Part Number :
BSR606NH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 2.3A SC59
Series :
Automotive, AEC-Q101, OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
657pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SC-59
Package / Case :
TO-236-3, SC-59, SOT-23-3
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