IRF5806TRPBF Pricing (USD) [504158pcs Stock]
- 1 pcs$0.07337
- 3,000 pcs$0.07040
- Part Number:
- IRF5806TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 20V 4A 6-TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF5806TRPBF electronic components. IRF5806TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5806TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5806TRPBF Product Attributes
Part Number :
IRF5806TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 20V 4A 6-TSOP
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
86 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.4nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
594pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Micro6™(TSOP-6)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
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