PSMN2R6-60PSQ Pricing (USD) [31173pcs Stock]
- 1 pcs$1.32210
- 10 pcs$1.19518
- 100 pcs$0.91104
- 500 pcs$0.70859
- 1,000 pcs$0.58711
- Part Number:
- PSMN2R6-60PSQ
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 60V 150A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN2R6-60PSQ electronic components. PSMN2R6-60PSQ can be shipped within 24 hours after order. If you have any demands for PSMN2R6-60PSQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN2R6-60PSQ Product Attributes
Part Number :
PSMN2R6-60PSQ
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 60V 150A TO-220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7629pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
326W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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