[302pcs Stock]
- Part Number:
- FQN1N50CBU
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 500V 380MA TO-92.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - RF, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQN1N50CBU electronic components. FQN1N50CBU can be shipped within 24 hours after order. If you have any demands for FQN1N50CBU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQN1N50CBU Product Attributes
Part Number :
FQN1N50CBU
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 500V 380MA TO-92
Series :
QFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
380mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.4nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
195pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
890mW (Ta), 2.08W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
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