NTR3A30PZT1G Pricing (USD) [383676pcs Stock]
- 1 pcs$0.09640
- 3,000 pcs$0.09462
- Part Number:
- NTR3A30PZT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V 3A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTR3A30PZT1G electronic components. NTR3A30PZT1G can be shipped within 24 hours after order. If you have any demands for NTR3A30PZT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTR3A30PZT1G Product Attributes
Part Number :
NTR3A30PZT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V 3A SOT23
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
38 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17.6nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1651pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
480mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3 (TO-236)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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