STY112N65M5 Pricing (USD) [2514pcs Stock]
- 1 pcs$17.22549
- 10 pcs$15.93381
- 100 pcs$13.60814
- Part Number:
- STY112N65M5
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 93A MAX247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STY112N65M5 electronic components. STY112N65M5 can be shipped within 24 hours after order. If you have any demands for STY112N65M5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STY112N65M5 Product Attributes
Part Number :
STY112N65M5
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 93A MAX247
Series :
MDmesh™ V
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
350nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
16870pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
625W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
MAX247™
Package / Case :
TO-247-3
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