SIUD401ED-T1-GE3 Pricing (USD) [881611pcs Stock]
- 1 pcs$0.04195
- Part Number:
- SIUD401ED-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 30V POWERPAK 0806.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIUD401ED-T1-GE3 electronic components. SIUD401ED-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIUD401ED-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIUD401ED-T1-GE3 Product Attributes
Part Number :
SIUD401ED-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V POWERPAK 0806
Series :
TrenchFET® Gen III
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
1.573 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id :
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
33pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.25W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 0806
Package / Case :
PowerPAK® 0806
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