Vishay Siliconix - SIHA100N60E-GE3

KEY Part #: K6397689

SIHA100N60E-GE3 Pricing (USD) [16790pcs Stock]

  • 1 pcs$2.45470

Part Number:
SIHA100N60E-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V TO-220 FULLPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Power Driver Modules and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHA100N60E-GE3 electronic components. SIHA100N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHA100N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHA100N60E-GE3 Product Attributes

Part Number : SIHA100N60E-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V TO-220 FULLPAK
Series : E
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1851pF @ 100V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220 Full Pack
Package / Case : TO-220-3 Full Pack

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