Vishay Siliconix - SI7212DN-T1-E3

KEY Part #: K6525113

SI7212DN-T1-E3 Pricing (USD) [68608pcs Stock]

  • 1 pcs$0.56991
  • 3,000 pcs$0.53396

Part Number:
SI7212DN-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 30V 4.9A 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7212DN-T1-E3 electronic components. SI7212DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7212DN-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7212DN-T1-E3 Product Attributes

Part Number : SI7212DN-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 4.9A 1212-8
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 36 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.3W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® 1212-8 Dual
Supplier Device Package : PowerPAK® 1212-8 Dual