SI1443EDH-T1-GE3 Pricing (USD) [554957pcs Stock]
- 1 pcs$0.06665
- 3,000 pcs$0.06317
- Part Number:
- SI1443EDH-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 30V 4A SOT-363.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI1443EDH-T1-GE3 electronic components. SI1443EDH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1443EDH-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1443EDH-T1-GE3 Product Attributes
Part Number :
SI1443EDH-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V 4A SOT-363
Series :
TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
54 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
1.6W (Ta), 2.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-363
Package / Case :
6-TSSOP, SC-88, SOT-363
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