SIHF15N65E-GE3 Pricing (USD) [22480pcs Stock]
- 1 pcs$1.77602
- 10 pcs$1.58784
- 100 pcs$1.30187
- 500 pcs$1.00012
- 1,000 pcs$0.84347
- Part Number:
- SIHF15N65E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 650V 15A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Power Driver Modules, Diodes - RF and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHF15N65E-GE3 electronic components. SIHF15N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHF15N65E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHF15N65E-GE3 Product Attributes
Part Number :
SIHF15N65E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 650V 15A TO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
280 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
34W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220 Full Pack
Package / Case :
TO-220-3 Full Pack
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