[302pcs Stock]
- Part Number:
- FDAF59N30
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 300V 34A TO-3PF.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDAF59N30 electronic components. FDAF59N30 can be shipped within 24 hours after order. If you have any demands for FDAF59N30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDAF59N30 Product Attributes
Part Number :
FDAF59N30
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 300V 34A TO-3PF
Series :
UniFET™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4670pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
161W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PF
Package / Case :
TO-3P-3 Full Pack
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