Toshiba Semiconductor and Storage - TPHR9203PL,L1Q

KEY Part #: K6409657

TPHR9203PL,L1Q Pricing (USD) [114189pcs Stock]

  • 1 pcs$0.33251
  • 5,000 pcs$0.33086

Part Number:
TPHR9203PL,L1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPHR9203PL,L1Q electronic components. TPHR9203PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPHR9203PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPHR9203PL,L1Q Product Attributes

Part Number : TPHR9203PL,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7540pF @ 15V
FET Feature : -
Power Dissipation (Max) : 132W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP Advance (5x5)
Package / Case : 8-PowerVDFN

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