FDD6530A Pricing (USD) [206666pcs Stock]
- 1 pcs$0.17897
- 2,500 pcs$0.17334
- Part Number:
- FDD6530A
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 20V 21A D-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD6530A electronic components. FDD6530A can be shipped within 24 hours after order. If you have any demands for FDD6530A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD6530A Product Attributes
Part Number :
FDD6530A
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 20V 21A D-PAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
32 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
3.3W (Ta), 33W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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