Renesas Electronics America - NP75P03YDG-E1-AY

KEY Part #: K6405596

NP75P03YDG-E1-AY Pricing (USD) [1610pcs Stock]

  • 2,500 pcs$0.40357

Part Number:
NP75P03YDG-E1-AY
Manufacturer:
Renesas Electronics America
Detailed description:
MOSFET P-CH 30V 75A 8HSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Renesas Electronics America NP75P03YDG-E1-AY electronic components. NP75P03YDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP75P03YDG-E1-AY, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NP75P03YDG-E1-AY Product Attributes

Part Number : NP75P03YDG-E1-AY
Manufacturer : Renesas Electronics America
Description : MOSFET P-CH 30V 75A 8HSON
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 141nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4800pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta), 138W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HSON
Package / Case : 8-SMD, Flat Lead Exposed Pad

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