SI7703EDN-T1-E3 Pricing (USD) [135773pcs Stock]
- 1 pcs$0.27242
- 3,000 pcs$0.25581
- Part Number:
- SI7703EDN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 20V 4.3A 1212-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Zener - Single, Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI7703EDN-T1-E3 electronic components. SI7703EDN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7703EDN-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7703EDN-T1-E3 Product Attributes
Part Number :
SI7703EDN-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V 4.3A 1212-8
Series :
TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
48 mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.3W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8
Package / Case :
PowerPAK® 1212-8
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