NTMFS4H02NFT1G Pricing (USD) [41881pcs Stock]
- 1 pcs$0.93829
- 1,500 pcs$0.93362
- Part Number:
- NTMFS4H02NFT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 25V 37A SO8FL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Thyristors - SCRs, Diodes - Rectifiers - Single and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTMFS4H02NFT1G electronic components. NTMFS4H02NFT1G can be shipped within 24 hours after order. If you have any demands for NTMFS4H02NFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTMFS4H02NFT1G Product Attributes
Part Number :
NTMFS4H02NFT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 25V 37A SO8FL
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2652pF @ 12V
FET Feature :
-
Power Dissipation (Max) :
3.13W (Ta), 83W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
5-DFN (5x6) (8-SOFL)
Package / Case :
8-PowerTDFN
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