CSD13306WT Pricing (USD) [259492pcs Stock]
- 1 pcs$0.14254
- 250 pcs$0.12102
- 1,250 pcs$0.07530
- Part Number:
- CSD13306WT
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 12V 6DSBGA.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD13306WT electronic components. CSD13306WT can be shipped within 24 hours after order. If you have any demands for CSD13306WT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD13306WT Product Attributes
Part Number :
CSD13306WT
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 12V 6DSBGA
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
10.2 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.2nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
1370pF @ 6V
FET Feature :
-
Power Dissipation (Max) :
1.9W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-DSBGA (1x1.5)
Package / Case :
6-UFBGA, DSBGA
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