Vishay Siliconix - SIHH21N60E-T1-GE3

KEY Part #: K6417767

SIHH21N60E-T1-GE3 Pricing (USD) [40976pcs Stock]

  • 1 pcs$0.95899
  • 3,000 pcs$0.95422

Part Number:
SIHH21N60E-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 20A POWERPAK8X8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHH21N60E-T1-GE3 electronic components. SIHH21N60E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH21N60E-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH21N60E-T1-GE3 Product Attributes

Part Number : SIHH21N60E-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 20A POWERPAK8X8
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 176 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 83nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2015pF @ 100V
FET Feature : -
Power Dissipation (Max) : 104W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 8 x 8
Package / Case : 8-PowerTDFN

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