ON Semiconductor - FDD13AN06A0

KEY Part #: K6417714

FDD13AN06A0 Pricing (USD) [132923pcs Stock]

  • 1 pcs$0.27826
  • 2,500 pcs$0.26616

Part Number:
FDD13AN06A0
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 50A D-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in ON Semiconductor FDD13AN06A0 electronic components. FDD13AN06A0 can be shipped within 24 hours after order. If you have any demands for FDD13AN06A0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD13AN06A0 Product Attributes

Part Number : FDD13AN06A0
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 50A D-PAK
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 9.9A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 115W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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