FDD3860 Pricing (USD) [176023pcs Stock]
- 1 pcs$0.21118
- 2,500 pcs$0.21013
- Part Number:
- FDD3860
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 6.2A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - JFETs, Diodes - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD3860 electronic components. FDD3860 can be shipped within 24 hours after order. If you have any demands for FDD3860, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD3860 Product Attributes
Part Number :
FDD3860
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 6.2A DPAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1740pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta), 69W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-PAK (TO-252AA)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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