Diodes Incorporated - DMN2400UFD-7

KEY Part #: K6416883

DMN2400UFD-7 Pricing (USD) [1007122pcs Stock]

  • 1 pcs$0.03691
  • 3,000 pcs$0.03673

Part Number:
DMN2400UFD-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 20V 0.9A DFN1212-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Thyristors - SCRs - Modules, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Thyristors - TRIACs and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN2400UFD-7 electronic components. DMN2400UFD-7 can be shipped within 24 hours after order. If you have any demands for DMN2400UFD-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2400UFD-7 Product Attributes

Part Number : DMN2400UFD-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 20V 0.9A DFN1212-3
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 500nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 37pF @ 16V
FET Feature : -
Power Dissipation (Max) : 400mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X1-DFN1212-3
Package / Case : 3-UDFN