NDD03N80Z-1G Pricing (USD) [2727pcs Stock]
- 1,275 pcs$0.16984
- Part Number:
- NDD03N80Z-1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 2.9A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor NDD03N80Z-1G electronic components. NDD03N80Z-1G can be shipped within 24 hours after order. If you have any demands for NDD03N80Z-1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NDD03N80Z-1G Product Attributes
Part Number :
NDD03N80Z-1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 2.9A IPAK
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
96W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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