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  5. NDBA180N10BT4H

ON Semiconductor - NDBA180N10BT4H

KEY Part #: K6402373

[2726pcs Stock]

    Part Number:
    NDBA180N10BT4H
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 100V 180A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modules ...
    Competitive Advantage:
    We specialize in ON Semiconductor NDBA180N10BT4H electronic components. NDBA180N10BT4H can be shipped within 24 hours after order. If you have any demands for NDBA180N10BT4H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NDBA180N10BT4H Product Attributes

    Part Number : NDBA180N10BT4H
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 100V 180A DPAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 180A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V, 15V
    Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 50A, 15V
    Vgs(th) (Max) @ Id : 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 95nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 6950pF @ 50V
    FET Feature : -
    Power Dissipation (Max) : 200W (Tc)
    Operating Temperature : 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : D²PAK (TO-263)
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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