Vishay Siliconix - SIB452DK-T1-GE3

KEY Part #: K6416936

SIB452DK-T1-GE3 Pricing (USD) [275873pcs Stock]

  • 1 pcs$0.13407
  • 3,000 pcs$0.12616

Part Number:
SIB452DK-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 190V 1.5A SC75-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Siliconix SIB452DK-T1-GE3 electronic components. SIB452DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB452DK-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIB452DK-T1-GE3 Product Attributes

Part Number : SIB452DK-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 190V 1.5A SC75-6
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 190V
Current - Continuous Drain (Id) @ 25°C : 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 135pF @ 50V
FET Feature : -
Power Dissipation (Max) : 2.4W (Ta), 13W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SC-75-6L Single
Package / Case : PowerPAK® SC-75-6L

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