PSMN165-200K,518 Pricing (USD) [39pcs Stock]
- 10,000 pcs$0.21879
- Part Number:
- PSMN165-200K,518
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 200V 2.9A SOT96-1.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Diodes - RF ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN165-200K,518 electronic components. PSMN165-200K,518 can be shipped within 24 hours after order. If you have any demands for PSMN165-200K,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN165-200K,518 Product Attributes
Part Number :
PSMN165-200K,518
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 200V 2.9A SOT96-1
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
165 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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