IXYS - IXTY1R4N60P

KEY Part #: K6410095

IXTY1R4N60P Pricing (USD) [55pcs Stock]

  • 1 pcs$0.57280
  • 10 pcs$0.50674
  • 100 pcs$0.40054
  • 500 pcs$0.29382
  • 1,000 pcs$0.23196

Part Number:
IXTY1R4N60P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 600V 1.4A D-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays and Power Driver Modules ...
Competitive Advantage:
We specialize in IXYS IXTY1R4N60P electronic components. IXTY1R4N60P can be shipped within 24 hours after order. If you have any demands for IXTY1R4N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTY1R4N60P Product Attributes

Part Number : IXTY1R4N60P
Manufacturer : IXYS
Description : MOSFET N-CH 600V 1.4A D-PAK
Series : PolarHV™
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id : 5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63