Diodes Incorporated - DMG7430LFG-7

KEY Part #: K6420181

DMG7430LFG-7 Pricing (USD) [714012pcs Stock]

  • 1 pcs$0.05180
  • 2,000 pcs$0.04666

Part Number:
DMG7430LFG-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 30V 10.5A PWRDI3333.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Special Purpose, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - JFETs and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Diodes Incorporated DMG7430LFG-7 electronic components. DMG7430LFG-7 can be shipped within 24 hours after order. If you have any demands for DMG7430LFG-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG7430LFG-7 Product Attributes

Part Number : DMG7430LFG-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 30V 10.5A PWRDI3333
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1281pF @ 15V
FET Feature : -
Power Dissipation (Max) : 900mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI3333-8
Package / Case : 8-PowerWDFN

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